Concentration dependent interdiffusion in InGaAs/GaAs as evidenced by high resolution x-ray diffraction and photoluminescence spectroscopy

Abstract:
A high resolution x-ray diffraction (HRXRD) and photoluminescence study of a 10 nm InGaAs/GaAs quantum well structure repeatedly diffused under thermally accurate and timed annealing conditions demonstrates that the Fickian model with a constant coefficient of diffusion is inadequate and that the distribution of compositions of the diffused well cannot be fitted with error functions. A simple model, with the well retaining its square shape and homogeneity while dissolving the barriers when annealed, is successful in modelling both the HRXRD and photoluminescence data.