We use cookies on this website, you can read about them here. To use the website as intended please... ACCEPT COOKIES

Concentration dependent interdiffusion in InGaAs/GaAs as evidenced by high resolution x-ray diffraction and photoluminescence spectroscopy

Bollet, Fabrice and Gwilliam, R. and Hopkinson, M. and Gillin, W. (2005) Concentration dependent interdiffusion in InGaAs/GaAs as evidenced by high resolution x-ray diffraction and photoluminescence spectroscopy. Journal of Applied Physics, 97 (013536). p. 4. ISSN 00218979

This is the latest version of this item.

Available Versions of this Item

Repository Staff Only: item control page