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Concentration dependent interdiffusion in InGaAs/GaAs as evidenced by high resolution x-ray diffraction and photoluminescence spectroscopy

Bollet, Fabrice and Gwilliam, R. and Hopkinson, M. and Gillin, W. (2005) Concentration dependent interdiffusion in InGaAs/GaAs as evidenced by high resolution x-ray diffraction and photoluminescence spectroscopy. Journal of Applied Physics, 97 (013536). p. 4. ISSN 00218979 [Physical Sciences > Applied Physics]

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