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Collins, P. and Barnett, I.B.M. and Bartalini, P. and Bell, W. and Berglund, P. and de Boer, W. and Buontempo, S. and Borer, K. and Bowcock, T. and Buytaert, J. and Casagrande, L. and Chabaud, V. and Chochula, P. and Cindro, V. and Da Via, C. and Devine, S. and Dijkstra, H. and Dezillie, B. and Dimcovski, Z. and Dormond, O. and Eremin, V. and Esposito, A. and Frei, Regina and Granata, V. and Grigoriev, E. and Hauler, F. and Heising, S. and Janos, S. and Jungermann, L. and Li, Z. and Lourenço, C. and Mikuž, M. and Niinikoski, T.O. and O'Shea, V. and Palmieri, V.G. and Paul, S. and Parkes, C. and Ruggiero, G. and Ruf, T. and Saladino, S. and Schmitt, L. and Smith, K. and Stavitski, I. and Verbitskaya, E. and Vitobello, F. and Zavrtanik, M. (2000) Cryogenic operation of silicon detectors. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 447 (1-2). 151 - 159. ISSN 0168-9002
| Type of Research: | Article |
|---|---|
| Creators: | Collins, P. and Barnett, I.B.M. and Bartalini, P. and Bell, W. and Berglund, P. and de Boer, W. and Buontempo, S. and Borer, K. and Bowcock, T. and Buytaert, J. and Casagrande, L. and Chabaud, V. and Chochula, P. and Cindro, V. and Da Via, C. and Devine, S. and Dijkstra, H. and Dezillie, B. and Dimcovski, Z. and Dormond, O. and Eremin, V. and Esposito, A. and Frei, Regina and Granata, V. and Grigoriev, E. and Hauler, F. and Heising, S. and Janos, S. and Jungermann, L. and Li, Z. and Lourenço, C. and Mikuž, M. and Niinikoski, T.O. and O'Shea, V. and Palmieri, V.G. and Paul, S. and Parkes, C. and Ruggiero, G. and Ruf, T. and Saladino, S. and Schmitt, L. and Smith, K. and Stavitski, I. and Verbitskaya, E. and Vitobello, F. and Zavrtanik, M. |
| Description: | This paper reports on measurements at cryogenic temperatures of a silicon microstrip detector irradiated with 24 GeV protons to a fluence of 3.5x10 14p/cm2 and of a p–n junction diode detector irradiated to a similar fluence. At temperatures below 130 K a recovery of charge collection efficiency and resolution is observed. Under reverse bias conditions this recovery degrades in time towards some saturated value. The recovery is interpreted qualitatively as changes in the effective space charge of the detector causing alterations in the depletion voltage. |
| Official Website: | https://www.sciencedirect.com/science/article/abs/pii/S0168900200001832 |
| Keywords/subjects not otherwise listed: | Position resolution, Radiation damage, Silicon detectors |
| Publisher/Broadcaster/Company: | Elsevier |
| Your affiliations with UAL: | Colleges > London College of Fashion |
| Date: | 1 June 2000 |
| Digital Object Identifier: | 10.1016/S0168-9002(00)00183-2 |
| Date Deposited: | 02 Aug 2024 14:18 |
| Last Modified: | 14 Aug 2024 14:27 |
| Item ID: | 22350 |
| URI: | https://ualresearchonline.arts.ac.uk/id/eprint/22350 |
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